发明名称 BUMP FORMING DEVICE FOR CHARGE GENERATING SEMICONDUCTOR SUBSTRATE AND METHOD FOR REMOVING CHARGE OF CHARGE GENERATING SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a bump forming device in which the removal of charge of a charge generating semiconductor substrate is carried out, and a method for removing the charge of the charge generating semiconductor substrate which is carried out for the bump forming device. SOLUTION: A control device 180 executes temperature lowering control when a wafer is cooled down, at least after bump bonding is applied to a wafer 202, thereby removing the charge stored on the rear surface 202b of the wafer. Accordingly, the quantity of charge on the rear surface can be more reduced in comparison with a conventional method. Damage to the circuits formed on the wafer caused by the charging or damages such as cracks of the wafer itself can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005159373(A) 申请公布日期 2005.06.16
申请号 JP20050021746 申请日期 2005.01.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NARITA MASACHIKA;TSUBOI YASUTAKA;IKETANI MASAHIKO;MAE TAKAHARU;KANAYAMA SHINJI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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