| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the cutting of a film formed on a surface caused by the shape of the surface before the film is formed can be prevented, the increase of the forming cost of an insulating film formed on a large-sized substrate can be suppressed, the utilization efficiency of a material can be improved, and the amount of wastes can be reduced. SOLUTION: In the method of manufacturing semiconductor device, a first insulating film is formed by discharging a composition, a second insulating film is formed selectively on the first insulating film, and openings are formed by etching the first insulating film by using the second insulating film as a mask. Thereafter, conductive films are formed in the openings by discharging a composition into the openings so that lower-layer wiring and upper-layer wiring may be connected to each other through insulating films. COPYRIGHT: (C)2005,JPO&NCIPI
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