发明名称 |
METHOD OF MANUFACTURING WIRING, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF DISCHARGING DROPLET |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing wiring by which the line width of wiring etc., can be reduced by a method which is different from the conventional method, because it is required to reduce the line width by preventing the line width from becoming broader in width in forming the wiring etc., by the dripping method represented by the ink-jet method. SOLUTION: In the method, a liquid repellent area is formed on a surface on which a desired pattern is formed and another area which becomes selectively lyophilic to the liquid repellent area is formed before the pattern is formed. Thereafter, a pattern of wiring etc., is formed in the lyophilic area by the dripping method represented by the ink-jet method in which a composition containing a conductive material for the wiring etc., is dripped. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005159327(A) |
申请公布日期 |
2005.06.16 |
申请号 |
JP20040311157 |
申请日期 |
2004.10.26 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MAEKAWA SHINJI;YAMAZAKI SHUNPEI;MURANAKA KOJI;TATEMURA YUKO |
分类号 |
H01L51/50;B05D1/26;B05D3/06;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L29/786;H05B33/14;(IPC1-7):H01L21/320 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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