| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a HEMT element which is used as a switching element, in a high frequency module. SOLUTION: In an active region, prescribed by an isolation element 9 on a major surface of a substrate 1 consisting of GaAs, a gate electrode 17 is formed of one line and extends vertically in a plane between a source electrode 13 and a drain electrode 14, and patterning is carried out in other parts so that it extends to the right and to the left. Consequently, the rate of the gate electrode 17 disposed outside an active region is reduced and an area of a gate pad 17A is reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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