WASHING TANK OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To solve problems that washing requiring long-time processing and high temperature processing can not be performed in a conventional one-bath type washing tank because the temperature of chemicals in the washing tank is reduced during washing by the chemicals, and the performance of washing is deteriorated with the lapse of time and longer time washing is required for obtaining chemical circulation type washing and the performance of the washing. SOLUTION: The washing tank of which the inner surface is smooth and the outer surface is rugged can suppress temperature drop in an one-bath type washing device and the deterioration of washing performance due to the temperature drop. COPYRIGHT: (C)2005,JPO&NCIPI