| 摘要 |
PROBLEM TO BE SOLVED: To prevent reduction in adhesion during the process of tungsten electrode formation in a hole fine in size and high in aspect ratio by means of the atomic layer deposition (ALD) method, and to suppress generation of particles from the wafer bevel section at the post-process. SOLUTION: A first tungsten 104 is deposited by ALD on a titanium nitride 103 constituting an adhesion layer, and the first tungsten 104 is removed, except the parts on the hole bottom and wall. A second tungsten 105 is deposited by CVD on the parts wherefrom the first tungsten 104 has been removed. A third tungsten 106 is deposited on the first tungsten 104 in the hole and on the second tungsten 105 on an insulating film 102. By using this constitution, adhesion is improved between the titanium nitride 103 and the third tungsten 106 and, since the first tungsten 104 is not deposited on the wafer bevel section, particle generation is suppressed during processes to follow. COPYRIGHT: (C)2005,JPO&NCIPI
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