| 摘要 |
PROBLEM TO BE SOLVED: To prevent increase of a leakage current and shortage of the pn junction which are to be generated in a nearer part to exterior in the widthwise direction of an array in a linear array type semiconductor laser device. SOLUTION: On both exterior of the widthwise direction of linear array (LD array), a first non-active region 6 wider than a second non-active region 7 between emitters 5 is formed, and a comparatively long scribe line 8 for dividing and starting by cleavage into profile of a LD array is put in the first non-active region, thereby preventing the emitter from being damaged and increase of a leakage current. In the case of coating of an optical film to cleavage plane, charge of coating material is turned and crowded, and coating is made to be performed also to side faces of both exterior. The LD array is attached on a heatsink or the like without separating the first non-active regions. Consequently, shortage of the pn junction by creeping-up of solder acted for LD array wearing to a side view of both exterior is prevented, and manufacturing cost is also reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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