Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles

摘要

A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.