发明名称 FORMING METHOD OF INSULATING FILM, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a forming method of a film having opening portions on metals, without requiring any process for providing the openings on the metals after forming the film, by forming no film on desired metals, in an electronic device wherein such one or more kinds of metals as electrodes and insulators are formed on a single substrate. <P>SOLUTION: The forming method of a film includes first and second methods. In a first method, by coating the whole of a substrate 5 with a coating liquid whereto any metal is non-wettable, the film of the coating liquid is so formed on the surface of the substrate 5 other than metal electrodes 1, 3 as to form insulating films 6 selectively by solidifying the film of the coating liquid. In a second method for forming insulating films selectively in an electronic device wherein metals comprising two or more kinds of different ones from each other and insulators are formed in a single substrate, by coating the whole of the substrate with a coating liquid whereto only the desired metals of the two or more kinds of different metals from each other are non-wettable, the film of the coating liquid is so formed on the whole of the substrate other than the non-wettable desired metals to the coating liquid as to form insulating films selectively on the substrate other than the desired metals by solidifying the film of the coating liquid. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005159225(A) 申请公布日期 2005.06.16
申请号 JP20030399047 申请日期 2003.11.28
申请人 KYORITSU KAGAKU SANGYO KK 发明人 KAMIMURA TAICHI;SUGITANI MASAO;KUMAKURA MASAYOSHI;HATADA KENZO
分类号 H01L23/29;H01L23/31;H01L23/52;H01L25/04;H01L25/18;H05K3/28;(IPC1-7):H05K3/28 主分类号 H01L23/29
代理机构 代理人
主权项
地址