发明名称 FIELD EFFECT ORGANIC TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a field effect organic transistor having a large mobility and improved on-off ratio and threshold variation which can be used effectively for the electronics field such as display device, information tag and IC or the like. SOLUTION: The field effect organic transistor comprises electrodes such as a source electrode 16, a drain electrode 15, and a gate electrode 12; and moreover a gate insulating layer 13, and an organic semiconductor layer 17. Moreover, a silane compound having the aromatic cycle is arranged at the interface between the gate insulating layer 13 and the organic semiconductor layer 17. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005158765(A) 申请公布日期 2005.06.16
申请号 JP20030390474 申请日期 2003.11.20
申请人 CANON INC 发明人 NAKAMURA SHINICHI
分类号 H01L51/05;H01L21/336;H01L29/786;H01L51/00;(IPC1-7):H01L29/786 主分类号 H01L51/05
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