发明名称 Method for the prediction of the source of semiconductor part deviations
摘要 A method for predicting a source of semiconductor part deviation is disclosed. The method includes the steps of selecting at least one chart including part parameters and associating with each of the part parameters at least one fabrication process, which are stored in recipes, scanning the selected charts for deviations in the part parameters, wherein the deviations are determined by monitoring a trend of recent values of the part parameters, indicating the charts containing the part parameters wherein the part parameter values are determined as being outside of at least one trend tolerance value associated with the parameter, identifying, in each of the indicated charts at least one process associated with each of the part parameter deviations outside the at least one tread tolerance value, and determining a source of the parameter deviation by correlating each of the identified at least one processes. In one aspect of the invention, the selected chart includes the relationship between part parameters and processes.
申请公布号 US2005130329(A1) 申请公布日期 2005.06.16
申请号 US20030737550 申请日期 2003.12.16
申请人 LIAO YUSHAN;YU CHI-KUN;LU WEN-PIN;HSIEH CHUN-CHING 发明人 LIAO YUSHAN;YU CHI-KUN;LU WEN-PIN;HSIEH CHUN-CHING
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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