发明名称 |
METHOD OF INTEGRATING HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR DEVICES AND SUBMICRON METAL OXIDE SEMICONDUCTOR DEVICES |
摘要 |
The present invention provides a method of integrating at least one high voltage metal oxide semiconductor device and at least one Submicron metal oxide semiconductor device on a substrate. The method comprises: providing the substrate, forming a plurality of shallow trenches having different depths on a surface of the substrate, and forming a plurality of silicon oxide layers filling up the shallow trenches, and a top of each of the silicon oxide layers being in the shape of a mushroom.
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申请公布号 |
US2005130378(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20030707444 |
申请日期 |
2003.12.15 |
申请人 |
HUANG CHING-CHUN;HUANG MING-HSIEN;CHEN RONG-CHING;LIN JY-HWANG |
发明人 |
HUANG CHING-CHUN;HUANG MING-HSIEN;CHEN RONG-CHING;LIN JY-HWANG |
分类号 |
H01L21/762;H01L21/8234;(IPC1-7):H01L21/336;H01L21/76;H01L21/823 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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