| 摘要 |
<p>A method for the production of gallium nitride compound semiconductor chips from a wafer having gallium nitride compound semiconductor layers (2, 3) laminated on the principal surface of a substrate (1) comprises a step of forming first grooves (11) linearly in a desired chip shape by etching on the gallium nitride compound semiconductor layers (2, 3) sides of the wafer, a step of forming second grooves (22) having a nearly equal or smaller line width (W2) than a line width (W1) of the first grooves on the substrate (1) side of the wafer at positions not conforming to the central lines of the first grooves, and a step of dividing the wafer along the first and second grooves. It consequently allows the wafer to be accurately cut in an extremely high yield, with the result that the number of chips taken out of one wafer will be increased and the productivity will be enhanced.</p> |
