发明名称 SUBSTRATE FOR THIN-FILM FORMATION, THIN-FILM SUBSTRATE AND LIGHT EMITTING ELEMENT
摘要 A substrate for forming a single-crystal thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the single-crystal thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency.
申请公布号 WO2005003414(A8) 申请公布日期 2005.06.16
申请号 WO2004JP00051 申请日期 2004.01.07
申请人 MIYAHARA, KENICHIRO 发明人 MIYAHARA, KENICHIRO
分类号 C04B35/453;C04B35/58;C04B35/581;C04B35/645;C30B25/18;C30B29/40;H01L33/32;(IPC1-7):C30B29/38;C04B35/00;H01L33/00 主分类号 C04B35/453
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