PHASE CHANGE MEMORY ELEMENT AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a phase change memory element and a method of forming the phase change memory element.

SOLUTION: This element is provided with a heating electrode 106 having an electrode hole 112. The electrode hole 112 penetrates a predetermined region of the heating electrode 106. A phase change substance pattern 116a is in contact with an inner wall of the electrode hole 112. A contact surface of the phase change substance pattern 116a and the heating electrode 106 is an inner wall surface of the electrode hole 112. Thereby, an electric power consumption of the phase change memory element can be decreased by reducing a contact area of the heating electrode 106 and the phase change substance pattern 116a.

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