| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric meso crystal bearing thin film and a manufacturing method thereof, forming a ferroelectric thin film applied as a high-density. <P>SOLUTION: This ferroelectric thin film is obtained as follows. Silicon alkoxide and surface active agent are dissolved in alcohol of carbon numbers 1 to 3, and hydrolysis and polymerization reactoin of the alkoxide are accelerated by adding acid and water added thereto to form a self-organized sol. A thin film is formed of the sol, the thin film is made into dry gel or heated gel, and further burnt, and the surface active agent is removed to form a thin film where pores uniform in nano size and regularly arrayed are formed. Subsequently, the thin film having the pores of the nano size is dipped in a solution containing metal alkoxide or metal acetyl acetonite forming ferroelectric crystal, and precursor solution is synthesized by dissolving the alkoxide or acetyl acetonite in alcohol of carbon numbers 1 to 2. The sol or the precursor solution formed by adding acid or alkali and water to the above solution to cause hydrolysis of the alkoxide. The sol or the precursor solutio is absorbed in the pores, and dried and burnt to form a ferroelectric microcrystal of nano size in the pores. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
