| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an adverse effect of variations in threshold values among driver TFTs. <P>SOLUTION: When a switching TFT 20 is switched on, a data voltage on a data line is stored in a storage capacitor 24 as a gate voltage V<SB>G22</SB>of the driver TFT 22. In this state, a voltage on a pulse driver line is caused to fall. A MOS type capacity element 28 having the other end connected to a reference voltage is connected to a gate of the driver TFT 22, the MOS type capacity element 28 is in an on state before a fall of the pulse drive line and becomes an OFF state during the fall and a capacitance changes at the switching of ON state to the OFF state. Therefore, the slope of fall of the gate voltage V<SB>G22</SB>changes, and the gate voltage V<SB>G22</SB>after the fall on the pulse drive line can be corrected corresponding to the variation in the threshold values among the driver TFTs 22. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
