| 摘要 |
PROBLEM TO BE SOLVED: To provide an aluminum nitride bonded material useful as an electrostatic chuck for holding a semiconductor wafer in a semiconductor manufacturing apparatus, which comprises an aluminum nitride sintered compact bonded via a sintered metal layer and realizes uniform attraction treatment of the semiconductor wafer to be carried out when it is used for the above purpose. SOLUTION: The bonded material comprises aluminum nitride sintered compacts 1-a and 1-b in which a sintered metal layer 2 comprising tungsten or molybdenum having a thickness of 15 to 100μm is formed on at least a portion of a surface to be bonded, wherein the sintered metal layer has a sheet resistance value of 1Ω/square or less and exhibits a warp of 100μm/100mm or less. COPYRIGHT: (C)2005,JPO&NCIPI |
