| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask having an auxiliary pattern with improved dimensional accuracy of the mask. <P>SOLUTION: By the method for manufacturing a mask, a dummy pattern 2 and a device pattern 1 are formed in a chromium light shielding film 102 by first photography and etching, and the dummy pattern 2 formed in the light shielding film 102 is processed into an auxiliary pattern by second photolithography and etching (not shown in Figure). As the area density of the pattern is made uniform by using the dummy pattern 2, dimensional variance due to the etching rate can be suppressed compared to conventional techniques of simultaneously forming a device pattern 1 and an auxiliary pattern by one-time photolithography and etching. Therefore, the dimensional accuracy of the mask can be improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
