| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor and its manufacturing method, which can reduce the number of masks in forming contact holes or via holes to simplify processes. <P>SOLUTION: A semiconductor layer 51, a gate insulating film layer 52 and a gate electrode 53 are sequentially formed on an insulating substrate 50. A source region 54-1 and a drain region 54-2 are formed in the semiconductor layer 51 at both sides of the gate electrode 53, respectively. An inorganic film layer 58-1 and an organic planarized film layer 58-2 are formed so as to include a source electrode 57-1 and a drain electrode 57-2 which are linked with the source region 54-1 and the drain region 54-2, respectively, through contact holes/via holes 56-1 and 56-2 formed in an interlayer dielectric 55. Being planarized by the organic film layer 58-2, the inorganic film layer 58-1 may be brought into directly in contact with a pixel electrode 60 above. As a result, the number of masks used at the time of forming contact holes or via holes 59 may be reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
