| 摘要 |
PROBLEM TO BE SOLVED: To utilize a method of taking an electrode out from the position of the appearance of P layer to the front surface of the main PN junction and the backward PN junction and making it extended over an oxide film to go over the PN junction because the structure of making a breakdown voltage of the place where a main junction and a backward PN junction are in contact with a main front surface oxide film is necessary in a bidirectional block type high breakdown voltage planar device and make a channel stop layer constituted on the front surface between PN junction ends, in order to secure reliability, with the chip size increased, an effective area ratio decreased, the increase of the chip area prevented, and the effective area ratio increased. SOLUTION: The problem is solved with the structure of making both extended electrodes possess the channel stop effect to a depletion layer from the opposite side by making a main cathode electrode and a backward electrode taken out from the front surface extended over an oxide film to go over a PN junction and preventing a channel stop layer from being formed. COPYRIGHT: (C)2005,JPO&NCIPI
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