| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector which is excellent in radiation detection performance, realizes an element of a large area readily at a low cost and ensures satisfactory strength; and to provide its manufacturing method. SOLUTION: The semiconductor radiation detector 10 is provided with an n-type Si substrate 11 of a low resistance, an arsenic coating layer 12 formed on the Si substrate and a high resistance p-type CdTe growth layer 13 which is laminated and formed thereon by an MOVPE method, and is separated into a number of planar elements of hetero junction structure by a separation groove 15 which attains to the Si substrate from the surface of the CdTe growth layer. The Si substrate is subjected to heat treatment in hydrogen reduction atmosphere of a high temperature and its surface is cleaned. An arsenic coating layer is formed in the Si substrate 11 by thermally decomposing GaAs powder or GaAs crystal, and applying about one molecular layer of arsenic molecule. A CdTe growth layer of film thickness of about 0.2 to 0.5μm is formed in the Si substrate wherein the arsenic coating layer is formed by an MOVPE method in atmosphere of about 450 to 500°C . COPYRIGHT: (C)2005,JPO&NCIPI
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