| 摘要 |
PROBLEM TO BE SOLVED: To provide an electroless copper plating liquid or a pretreatment liquid which can be buried into a trench or a via hole of a semiconductor wafer having a fine pattern of≤200 nm without generating defects, and to provide an electroless copper plating method using the same. SOLUTION: The electroless copper plating liquid or a pretreatment agent for electroless copper plating comprises a bath soluble polyether compound in which the weight average molecular weight (Mw) is≥1,000, and also, Mw/Mn (Mn: the number average molecular weight) is≤1.2 as an additive. The electroless copper plating method uses them. COPYRIGHT: (C)2005,JPO&NCIPI
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