发明名称 |
POLISHING AGENT COMPOSITION FOR INSULATING FILM FOR SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
A polishing agent composition for polishing the surface of an insulating film comprising an organic silicon material having a C-Si bond and a Si-O bond for use in a semiconductor integrated circuit, which comprises water and particles of a specific rare earth element compound selected from the group consisting of a rare earth element hydroxide, a rare earth element fluoride, a rare earth element oxyfluoride, a rare earth element oxide except cerium oxide, and a composite compound formed therefrom; and the polishing agent composition which further comprises cerium oxide particles. The above polishing agent composition can provide a high quality polished surface which is free from or reduced in the occurrence of defects such as cracked, scratched or exfoliated portions.
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申请公布号 |
KR20050057208(A) |
申请公布日期 |
2005.06.16 |
申请号 |
KR20057003821 |
申请日期 |
2005.03.04 |
申请人 |
SEIMI CHEMICAL CO., LTD.;ASAHI GLASS COMPANY LTD. |
发明人 |
SHINMARU SACHIE;KAMITANI HIROYUKI;HAYASHI ATSUSHI;TSUGITA KATSUYUKI |
分类号 |
C09G1/02;C09K3/14;H01L21/302;H01L21/3105;H01L21/321;H01L21/46;H01L21/461;H01L21/4763;(IPC1-7):H01L21/304 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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