| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microwave introduction apparatus wherein microwaves can be uniformly introduced into a plasma processing chamber, and to provide a SWP (Surface Wave Plasma) processing apparatus which can carry out a process uniformly without any damages by plasmas. <P>SOLUTION: A microwave introduction section 10 has an inlet 3a for introducing microwaves from a microwave generator 1 and a termination 3b, and comprises an annular waveguide 3 wherein a bottom plate which is formed with a plurality of slot antennas at regular intervals serves as an internal-side surface, and a dielectric tube 4 whose cylindrical outside surface is arranged in contact with the bottom plate of the annular waveguide 3 and which introduces microwaves propagating inside the annular waveguide 3 through the slot antennas. The SWP processing apparatus 100 is equipped with a processing chamber which generates surface wave excitation plasmas in an airtight space by the microwaves introduced from the microwave introduction section 10, and processes a workpiece with the surface wave excitation plasmas. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
