| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in the case where a plate composed of an Al-SiC two-component composite material or a plate composed of an Al-Si-SiC composite material is used, vacuum airtightness of 1.3×10<SP>-10</SP>Pa×m<SP>3</SP>/sec He leak rate needed in the inside of semiconductor manufacturing equipment cannot be maintained even if the above composite-material plate is joined to a plate-like base material with a brazing filler metal, a solder, etc., because the composite-material plate itself is porous. SOLUTION: The composite material comprises SiC, SiO<SB>2</SB>and at least either of Al and Si and has≤1.3×10<SP>-10</SP>Pa×m<SP>3</SP>/sec He leak rate. COPYRIGHT: (C)2005,JPO&NCIPI |
