| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an organic thin film transistor capable of suppressing the degradation of the performance of the transistor which is caused by external factors such as oxygen, water or the like, and suppressing the degradation of the performance of the transistor to the minimum level in a process of mounting an indicator. <P>SOLUTION: The organic thin film semiconductor transistor comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor active layer, a source-drain electrode, and a protective layer, and further, a buffer layer installed between the above-mentioned organic semiconductor active layer and the above-mentioned protective layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
