| 摘要 |
PROBLEM TO BE SOLVED: To provide a new technology of pattern formation capable of lowering the cost of a pattern forming technique. SOLUTION: A heat disappearing resin film 3 is formed on a surface of an insulator film 2 on a semiconductor substrate 1 and the heat disappearing resin film 3 is irradiated with heat energy by laser beams 4. By this heat energy, the heat disappearing resin film 3 in the irradiated area is thermally decomposed and disappears, whereby the heat disappearing resin film 3 is patterned. The whole area is photoirradiated 6 to form an etching mask 5a and the insulator film 2 is dry-etched with plasma through the etching mask to form an opening 7 in the insulator film 2. Heat treatment is then carried out in an atmosphere of oxygen or nitrogen, whereby the etching mask 5a comprising the heat disappearing resin is thermally decomposed and thoroughly removed. COPYRIGHT: (C)2005,JPO&NCIPI |
