发明名称 |
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) |
摘要 |
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
|
申请公布号 |
US2005130440(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20040021319 |
申请日期 |
2004.12.22 |
申请人 |
YIM KANG S.;TAM MELISSA M.;SUGIARTO DIAN;LANG CHI-I;LEE PETER W.;XIA LI-QUN |
发明人 |
YIM KANG S.;TAM MELISSA M.;SUGIARTO DIAN;LANG CHI-I;LEE PETER W.;XIA LI-QUN |
分类号 |
C23C16/30;C23C16/40;C23C16/56;H01L21/311;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/336;H01L21/31;H01L21/469 |
主分类号 |
C23C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|