PLASMA PROCESSING APPARATUS AND MULTI-CHAMBER SYSTEM

摘要

A susceptor (16) on which an object wafer (W) is placed and a support (15) for supporting the susceptor (16) are arranged generally in the center of a chamber (2). A process gas supplying unit (4) feeds a process gas for treating the wafer (W) into the chamber (2). A first high-frequency power supply (5) and a second high-frequency power supply (7) respectively apply a certain high-frequency voltage for generating a plasma of the supplied process gas and processing the wafer (w) with the plasma. A dam (18) having a grounded conductive member (18a) is formed around the support (15) and the susceptor (16), so that the generated plasma is confined in a region above the wafer (W) which is placed on the susceptor (16).