发明名称 THIN FILM MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a technique to form a low resistance barrier film at a low temperature. SOLUTION: A catalyst material 21 is placed within a vacuum vessel 11, it is then heated, a raw material gas and a reactive gas are alternately introduced into the vacuum vessel 11, the raw material gas adsorbed to the surface of a film forming object 40 and the reactive gas are reacted with a radical which is decomposed to generate with the catalyst material 21. Accordingly, a thin film is laminated. A row resistance barrier film can be obtained at a low temperature. As the reactive gas, H<SB>2</SB>gas, NH<SB>3</SB>gas, and SiH<SB>4</SB>gas or the like can be used. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005158761(A) 申请公布日期 2005.06.16
申请号 JP20030390391 申请日期 2003.11.20
申请人 ULVAC JAPAN LTD 发明人 HARADA MASAMICHI;ITSUDO SHIGEFUMI
分类号 C23C16/44;C23C16/52;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):H01L21/285;H01L21/320 主分类号 C23C16/44
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