| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for inexpensively growing a diboride single crystal such as ZrB<SB>2</SB>which has a diameter of≥2 in and is used as a single crystal substrate for epitaxial growth of a GaN single crystal. SOLUTION: In the method, a liquid-cooled crucible 30 made of a metal which is excellent in thermal conductivity is used. A raw material is placed in the crucible, and a seed crystal is placed at the bottom of the crucible 30. The raw material is melted by high-frequency heating to produce a melt 40, and the crucible 30 is cooled to grow the crystal 50 on the seed crystal. COPYRIGHT: (C)2005,JPO&NCIPI
|
