| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal by which a high-quality silicon carbide single crystal can speedily, stably and continuously be grown, and a bulk single crystal can be made larger in diameter or a thin film single crystal can be made higher in quality. SOLUTION: A columnar work is constituted by successively stacking, from the lower side, a silicon carbide source rod, solvent, a seed crystal and a supporting rod supporting the seed crystal at the lower end. The lower end of the source rod as the lower end of the columnar work is heated, while the upper end of the supporting rod as the upper end of the work is cooled so that temperature gradient is formed in the columnar work with the upper end at a lower temperature than the lower end of the solvent and that a silicon carbide single crystal is continuously grown downward from the seed crystal as a starting point. In this method, an inner tube susceptor surrounding and tightly sticking to the circumference of the columnar work is used. COPYRIGHT: (C)2005,JPO&NCIPI
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