| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal by which a single crystal having a desired defect region, in particular, a silicon single crystal entirely comprising an N region can be manufactured with high yield and high productivity under easily controllable and stable manufacturing conditions with a wide margin of the pulling speed on growing a silicon single crystal by CZ (Czochralski) method, and to provide a method for designing an apparatus for manufacturing a single crystal and an apparatus for manufacturing a single crystal. SOLUTION: The method for manufacturing a silicon single crystal, the method for designing an apparatus for manufacturing a single crystal and the apparatus for manufacturing a single crystal are provided, wherein a silicon single crystal is manufactured by a CZ method, and the silicon single crystal is grown by controlling at least the following change rateα(=dGm/dV) to -0.63 to 0 K×min/mm<SP>2</SP>, whereinαis the change rate of the absolute temperature gradient Gm in the melt liquid side in the crystal center on the crystal growth interface in the pulling direction of the crystal to the pulling speed V of the single crystal. COPYRIGHT: (C)2005,JPO&NCIPI
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