发明名称 |
Method and apparatus for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side; forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region; In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.
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申请公布号 |
US2005130382(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20040000209 |
申请日期 |
2004.12.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NIWAYAMA MASAHIKO;YONEDA KENJI;TAKAHASHI KAZUMA |
分类号 |
H01L21/265;C23C16/00;H01L21/336;H01L21/8238;H01L29/04;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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