发明名称 Plating method, plating apparatus and a method of forming fine circuit wiring
摘要 A copper plating film has a lower chlorine ion content. Circuit wiring of high electromigration resistance is formed by electroplating. In a method of copper plating using a leveler containing a nitrogen-containing high molecular compound, the leveler is dechlorinated prior to its use for plating. A plating apparatus has a tank for preparing a plating solution, a device for dechlorinating a leveler, a leveler supply station for supplying the dechlorinated leveler to the tank and a plating station. A method of forming fine circuit wiring includes forming a circuit with a phosphorus-doped copper plating layer on a substrate for an electronic circuit having a fine circuit pattern, a barrier layer and any necessary seed layer formed thereon.
申请公布号 US2005126919(A1) 申请公布日期 2005.06.16
申请号 US20040980320 申请日期 2004.11.04
申请人 KUBOTA MAKOTO;SAHODA TSUYOSHI;NAKADA TSUTOMU;MISHIMA KOJI;KIMIZUKA RYOICHI 发明人 KUBOTA MAKOTO;SAHODA TSUYOSHI;NAKADA TSUTOMU;MISHIMA KOJI;KIMIZUKA RYOICHI
分类号 C25D3/38;C25D5/02;C25D17/00;C25D21/14;H05K3/42;(IPC1-7):C25D5/02 主分类号 C25D3/38
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