发明名称 |
Plating method, plating apparatus and a method of forming fine circuit wiring |
摘要 |
A copper plating film has a lower chlorine ion content. Circuit wiring of high electromigration resistance is formed by electroplating. In a method of copper plating using a leveler containing a nitrogen-containing high molecular compound, the leveler is dechlorinated prior to its use for plating. A plating apparatus has a tank for preparing a plating solution, a device for dechlorinating a leveler, a leveler supply station for supplying the dechlorinated leveler to the tank and a plating station. A method of forming fine circuit wiring includes forming a circuit with a phosphorus-doped copper plating layer on a substrate for an electronic circuit having a fine circuit pattern, a barrier layer and any necessary seed layer formed thereon.
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申请公布号 |
US2005126919(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20040980320 |
申请日期 |
2004.11.04 |
申请人 |
KUBOTA MAKOTO;SAHODA TSUYOSHI;NAKADA TSUTOMU;MISHIMA KOJI;KIMIZUKA RYOICHI |
发明人 |
KUBOTA MAKOTO;SAHODA TSUYOSHI;NAKADA TSUTOMU;MISHIMA KOJI;KIMIZUKA RYOICHI |
分类号 |
C25D3/38;C25D5/02;C25D17/00;C25D21/14;H05K3/42;(IPC1-7):C25D5/02 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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