| 摘要 |
PROBLEM TO BE SOLVED: To provide an alkaline processing technology for silicon material in which contamination by a metal impurity including Ni for the silicon material can be reduced during he alkaline process of silicon material. SOLUTION: The high concentration NaOH solution (51%) is heated up to 80°C, and an aluminum plate is dissolved into this solution. A p-type CZ wafer (plane orientation [100], specific resistance 0.01 to 0.02Ω-cm) is soaked for ten minutes into the alkaline solution obtained while it is stirred. Thereafter, a silicon wafer is rinsed only for five minutes in the flowing water. Accordingly, since the aluminum is included in the alkaline solution, contamination by metal impurity including Ni for silicon wafer can be reduced during the alkaline process of the silicon wafer. COPYRIGHT: (C)2005,JPO&NCIPI
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