发明名称 INFRARED SENSOR
摘要 PROBLEM TO BE SOLVED: To provide an infrared sensor capable of avoiding the possibility of damages to an insulation film provided in between an output terminal contact part and a silicon substrate surface and surely guarantee the insulation. SOLUTION: In an infrared sensor having an insulation membrane film 5, forming infrared detection elements 7, 8, 9, 10, 11, 12, 13 and 14 on a silicon substrate 1 surface side and a certain pairs of output terminal contact parts 6, the insulation membrane film 5, is provided so as not to position it below the output terminal contact part 6. A silicon oxide insulating film 3 of a film thickness of at least 4000Åis placed on the silicon substrate 1 surface, and the output terminal contact part 6 is positioned above the silicon insulation film 3 so that the possibility of damaging the silicon oxide insulation film 3 by static electricity is avoided and short circuiting of output terminals via the silicon substrate 1 is avoided. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005156255(A) 申请公布日期 2005.06.16
申请号 JP20030392814 申请日期 2003.11.21
申请人 NIPPON PRECISION CIRCUITS INC 发明人 HISHINUMA KUNIYUKI
分类号 G01J1/02;H01L35/14;H01L35/32;(IPC1-7):G01J1/02 主分类号 G01J1/02
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