| 摘要 |
PROBLEM TO BE SOLVED: To prevent the concentration of an impurity which is injected into a channel area, from being reduced while suppressing occurrence of an interface state in a gate-insulated semiconductor device including a trench element separation. SOLUTION: In the manufacturing method of the semiconductor device relating to the present invention, a part of a semiconductor layer 101 is removed to form a trench 104, and a surface of the trench 104 is oxidized to form a silicon oxide film 105. At least a surface portion of the silicon oxide film 105 is then nitrided by nitriding radicals in plasma. At such a time, it is preferable that the concentration of nitrogen in the surface portion of the silicon nitride film 105 is higher than the concentration of nitrogen in the interface of the silicon nitride film 105 and a silicon substrate 101. A filling insulating film 107 is then formed for filling the trench 104. COPYRIGHT: (C)2005,JPO&NCIPI
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