Method for manufacturing gate structure for use in semiconductor device

摘要

The present invention provides a method for manufacturing a stacked-gate structure in a semiconductor device. The method includes the steps of sequentially forming a gate dielectric layer, a poly-silicon layer, a metal layer, a barrier layer and a tungsten layer on top of a semiconductor substrate, performing a rapid thermal annealing (RTA) process in a nitrogen ambient, forming a silicon nitride layer on top of the tungsten layer, and patterning the multilayer thin-film structure to form a predetermined configuration.