| 发明名称 |
METHOD FOR CRYSTALLIZING AMORPHOUS SILICON |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for crystallizing amorphous silicon film which can ensure uniformity and excellent element performance. <P>SOLUTION: The method for crystallizing amorphous silicon is provided, in which an amorphous silicon film formed on an amorphous substrate at the time of manufacturing a liquid crystal display, is crystallized by irradiating with a heat source. Polycrystalline is formed in portions of the amorphous silicon film in a TFT formation region of a pixel portion and a TFT formation region of a peripheral circuit, through a process of selectively effecting primary irradiation and secondary irradiation with the heat source. Thereafter, a single crystal region of a desired size is formed at a predetermined position of the amorphous silicon film through a process of effecting tertiary irradiation with the heat source to one of crystal grains in the polycrystalline. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005159285(A) |
申请公布日期 |
2005.06.16 |
| 申请号 |
JP20040206357 |
申请日期 |
2004.07.13 |
| 申请人 |
BOE HYDIS TECHNOLOGY CO LTD |
发明人 |
RYU MYUNG KWAN;LEE HO NYEON;PARK JAE CHUL;KIM EOK SU;SON KYOUNG SEOK;LEE JUN HO;KWON SE YEOUL |
| 分类号 |
G02F1/136;B23K26/06;H01L21/00;H01L21/20;H01L21/26;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
G02F1/136 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
