发明名称 ELECTROOPTICAL DEVICE, SUBSTRATE THEREFOR METHOD OF MANUFACTURING THE SUBSTRATE, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a substrate for electrooptical device which can prevent an increase in contact resistance in a thin-film transistor and an increase in variation therein, and to provide a method of manufacturing the substrate for electrooptical device, an electrooptical device, and electronic equipment. SOLUTION: The substrate 10 for electrooptical device is formed by sticking a supporting substrate 10A with a semiconductor substrate having a semiconductor layer 1a, wherein a thin-film transistor 30A using the semiconductor layer 1a as an active layer is formed. In this substrate 10, relay layers 3b, 3c having conductivity are formed on a source region 1d and a drain region 1e of the thin-film transistor 30A. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005158935(A) 申请公布日期 2005.06.16
申请号 JP20030393780 申请日期 2003.11.25
申请人 SEIKO EPSON CORP 发明人 SAITO JUN
分类号 G02F1/1333;G02F1/1368;G09F9/30;H01L21/02;H01L21/336;H01L23/52;H01L27/12;H01L29/786;(IPC1-7):H01L21/336;G02F1/136;G02F1/133 主分类号 G02F1/1333
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