发明名称 |
Method for manufacturing thin gaas die with copper-back metal structures |
摘要 |
A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
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申请公布号 |
US2005127480(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20050050079 |
申请日期 |
2005.02.03 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ELLIOTT ALEXANDER J.;CROWDER JEFFREY D.;MILLER MONTE G. |
分类号 |
G06F12/00;G06F13/00;G11C5/00;H01L23/433;H01L23/482;H01L29/06;(IPC1-7):H01L23/58;H01L21/48 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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