发明名称 Method for manufacturing thin gaas die with copper-back metal structures
摘要 A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
申请公布号 US2005127480(A1) 申请公布日期 2005.06.16
申请号 US20050050079 申请日期 2005.02.03
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 ELLIOTT ALEXANDER J.;CROWDER JEFFREY D.;MILLER MONTE G.
分类号 G06F12/00;G06F13/00;G11C5/00;H01L23/433;H01L23/482;H01L29/06;(IPC1-7):H01L23/58;H01L21/48 主分类号 G06F12/00
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