发明名称 |
High-voltage generator circuit and semiconductor memory device including the same |
摘要 |
According to embodiments of the invention, a high-voltage generator circuit may include a voltage detector block that has a voltage divider, a discharge section, a comparator, and a control signal generator. The voltage divider generates a divided voltage at an output node by dividing a high voltage. The discharge section discharges the high voltage to a power voltage in response to a first control signal. The comparator determines whether the divided voltage reaches a reference voltage, and the control signal generator generates a second control signal in response to an output from the comparator and the first control signal. The voltage divider may include a high-voltage prevention circuit that prevents the high voltage from being applied to a low-voltage transistor of the comparator during a discharge period of the high voltage. The high-voltage prevention circuit may include a depletion-type or enhancement-type NMOS transistor having a high breakdown voltage.
|
申请公布号 |
US2005128821(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20040977426 |
申请日期 |
2004.10.28 |
申请人 |
KIM JONG-HWA;BYEON DAE-SEOK |
发明人 |
KIM JONG-HWA;BYEON DAE-SEOK |
分类号 |
G11C16/06;G11C5/14;G11C11/407;H01L27/10;H02M3/07;(IPC1-7):G11C5/00 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|