发明名称 High-voltage generator circuit and semiconductor memory device including the same
摘要 According to embodiments of the invention, a high-voltage generator circuit may include a voltage detector block that has a voltage divider, a discharge section, a comparator, and a control signal generator. The voltage divider generates a divided voltage at an output node by dividing a high voltage. The discharge section discharges the high voltage to a power voltage in response to a first control signal. The comparator determines whether the divided voltage reaches a reference voltage, and the control signal generator generates a second control signal in response to an output from the comparator and the first control signal. The voltage divider may include a high-voltage prevention circuit that prevents the high voltage from being applied to a low-voltage transistor of the comparator during a discharge period of the high voltage. The high-voltage prevention circuit may include a depletion-type or enhancement-type NMOS transistor having a high breakdown voltage.
申请公布号 US2005128821(A1) 申请公布日期 2005.06.16
申请号 US20040977426 申请日期 2004.10.28
申请人 KIM JONG-HWA;BYEON DAE-SEOK 发明人 KIM JONG-HWA;BYEON DAE-SEOK
分类号 G11C16/06;G11C5/14;G11C11/407;H01L27/10;H02M3/07;(IPC1-7):G11C5/00 主分类号 G11C16/06
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