发明名称 |
Plasma processing apparatus and evacuation ring |
摘要 |
A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110 at which an upper electrode 112 is provided and a container unit 120 having a lower electrode 122 provided to face opposite the upper electrode 112 , on which a substrate can be placed. An evacuation ring 126 is provided around the lower electrode 122 so as to divide the space in the processing chamber 100 into a plasma processing space 102 and an evacuation space 104 . At the evacuation ring 126 , through holes 126 a and blind holes 126 b which are fewer than the through holes 126 a and open toward the plasma processing space 102 are formed. An insulation coating constituted of Y<SUB>2</SUB>O<SUB>3 </SUB>is applied onto the surface of the evacuation ring 126 towards the plasma processing space 102.
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申请公布号 |
US2005126488(A1) |
申请公布日期 |
2005.06.16 |
申请号 |
US20050047595 |
申请日期 |
2005.02.02 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OGASAWARA MASAHIRO;KATO KAZUYA |
分类号 |
H05H1/46;B01J19/08;C23C16/00;C23C16/509;H01J37/32;H01L21/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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