发明名称 Diamond semiconductor device and method for manufacturing the same
摘要 A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.
申请公布号 US2005127373(A1) 申请公布日期 2005.06.16
申请号 US20040003510 申请日期 2004.12.06
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO. 发明人 YOKOTA YOSHIHIRO;KAWAKAMI NOBUYUKI;TACHIBANA TAKESHI;HAYASHI KAZUSHI
分类号 H01L27/12;H01L21/336;H01L29/16;H01L29/78;H01L29/786;(IPC1-7):H01L29/15 主分类号 H01L27/12
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