| 发明名称 |
One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 摘要 |
A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm<SUP>-2</SUP>, and a combined concentration of shallow level dopants less than 5E16 cm<SUP>-3</SUP>.
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| 申请公布号 |
US2005126471(A1) |
申请公布日期 |
2005.06.16 |
| 申请号 |
US20040876963 |
申请日期 |
2004.06.25 |
| 申请人 |
JENNY JASON R.;MALTA DAVID P.;HOBGOOD HUDSON M.;MUELLER STEPHAN G.;BRADY MARK;LEONARD ROBERT T.;POWELL ADRIAN;TSVETKOV VALERI F. |
发明人 |
JENNY JASON R.;MALTA DAVID P.;HOBGOOD HUDSON M.;MUELLER STEPHAN G.;BRADY MARK;LEONARD ROBERT T.;POWELL ADRIAN;TSVETKOV VALERI F. |
| 分类号 |
H01L21/205;C30B23/00;C30B29/36;C30B33/00;H01L21/324;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
H01L21/205 |
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