| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element provided with semiconductor laminates 3, 4, 5, 6, 7, and 8 containing an active layer 5 emitting light of a prescribed light emission wavelength and a substrate 10 transparent to the light emission wavelength jointed directly to the semiconductor laminates, which can show good electric characteristics and obtain high yield even if an imperfect bonding caused by hillock or the like is generated in a direct bonding surface 14. <P>SOLUTION: A bottom part 8a having a depth exceeding the position of an active layer 5 from the top surface is formed on a part of area of semiconductor laminates 3, 4, 5, 6, 7, and 8. First electrodes 11 and 13 are provided on the front surface of the semiconductor laminate 3 and a second electrode is provided on the bottom part 8a. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
