发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus wherein a substrate can be heat-treated by improving the in-plane temperature uniformity of the substrate. SOLUTION: The heat treatment apparatus comprises a heating plate 51' wherein the substrate W is arranged adjacently or mounted and heat-treated; a ceiling plate 63' which is arranged facing the substrate arranging surface of the heating plate 51' and having a temperature control mechanism 80; a surrounding member 62' for surrounding a space between the heating plate 51' and the ceiling plate 63'; a gas supply nozzle 102 which is arranged at one side of the heating plate 51' and for introducing gas into the space; and an exhaust nozzle 107 which is arranged at the other side of the heating plate 51' and for exhausting the gas from the space S'. The gas is supplied from one side of the heating plate 51' to the other side by the gas supply nozzle 102, the gas is exhausted by the exhaust nozzle 107, and an air stream of one direction is formed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005159377(A) 申请公布日期 2005.06.16
申请号 JP20050031467 申请日期 2005.02.08
申请人 TOKYO ELECTRON LTD 发明人 SHIRAKAWA HIDEKAZU;FUKUOKA TETSUO;NOGAMI TAKESHI
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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