| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a quartz crystal thin film which exhibits excellent crystal characteristics, in particular, a quartz crystal thin film grown in such a manner that the AT-cut plane is preferentially oriented in a high yield by using a simple vapor phase reactor. SOLUTION: At least two quartz layers (where the quartz layers are controlled so that each of the quartz layers is composed of a crystal phase and an amorphous phase and the ratio of the crystal phase in the quartz layer on the side farther from a substrate is higher than that of the crystal phase in the quartz layer on the side closer to the substrate) are formed on the surface of the substrate having a lattice constant different from that of the quartz crystal. Then the quartz crystal thin film is epitaxially grown on the surface of the crystal layer on the side farther from the substrate by the reaction of a silicic acid alkoxide and oxygen. COPYRIGHT: (C)2005,JPO&NCIPI
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